Abstract
• Gradient growth can strongly alter the emission properties of LDE GaAs QDs. • An etch-gradient shows a cut-off from areas with and without light emitting QDs. • Emission wavelengths between 731 nm and 795 nm can be achieved on a single wafer. • A pattern definition layer can be used for an additional periodical modulation. We present strategies for controlling growth parameters of local droplet etched GaAs quantum dots. We manage the local QD density and emission wavelength by gradient material deposition. We find regions with no light-emitting quantum dots sharply separated from regions with strong quantum dot luminescence. Close to this transition, we expect the lowest quantum dot densities possible under the used parameters. The maximum wavelength shift achieved due to a variation of GaAs hole filling level on a single 3-inch wafer ranges from 731 to 795 nm. By locally controlling the surface roughness, a profound additional influence on the emission wavelength and density is found. We show how to control this modulation on a millimeter-scale over the whole wafer.
Published Version
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