Abstract
Application of microwave for rapid annealing purposes have been recently introduced for silicon and apart from many advantages that it enjoys, it has also provide avenue to rapid recrystallisation and reduction of defects. One of the applications of such technology is microwave annealed re-crystallised solar cells. In this work, modelling of microwave power spatial distribution in doped crystalline silicon (c-Si) is presented for advancement of re-crystallised solar cell technology. Helmholtz equation was solved for determination of electric field distribution inside the material system using 3D exact Finite Difference Method. Subsequently, microwave power distribution was obtained using application of Poynting power theorem. All results presented in this paper corresponds to Industrial, Scientific and Medical (ISM) frequency of 2.45 GHz.
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