Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

Abstract

Transport properties of the two-dimensional hole gas in inversion layer of strained Si/SiGe p-MOSFETs are investigated using the full-band Monte Carlo simulator based on the nonlocal pseudopotential calculation. The hole mobility is significantly enhanced by the strain in the case of Ge content of ≥20%. Moreover, we also present the high-field transport characteristics of 2D holes. In contrast to the low-field mobility, the hole saturation velocity does not significantly enhanced by the strain.