Abstract
Fourier transform infrared (FTIR) transmission spectroscopy was used to monitor the decomposition of H 2O (D 2O) and NH 3 (ND 3) on silicon surfaces. Experiments were performed in-situ in an ultra-high vacuum (UHV) chamber using high surface area poroussilicon samples. The FTIR spectra revealed that H 2O dissociates upon adsorption at 300K to form SiH and SiOH surface species. NH 3 also dissociates upon adsorption at 300 K to form SiH and SiNH 2 species. Silicon samples with saturation exposures of H 2O and NH 3 were progressively annealed from 300 K to 860 K. The FTIR spectra of an H 2O-saturated silicon surface revealed that the SiOH species decomposed to form a silicon oxide species and additional surface hydrogen between 460 K and 580 K. Likewise, the SiNH 2 species decomposed between 540 K and 660 K to produce silicon nitride and additional surface hydrogen. In both cases, the SiH surface species decreased as H 2 desorption from the silicon surface was observed above 700 K.
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