Abstract
We report process characterization for a fluorosilicate glass (FSG), developed specifically for copper/damascene, where both the via and the line are embedded in FSG (K/spl les/3.65) at 6 levels. We compare FSG films deposited in both high density plasma (HDP) and PECVD reactors, for K values within the range 3.50-3.70; PECVD FSG films absorb more water than HDP films. Several issues important in producing a manufacturable FSG technology are noted: FSG film thickness; deposition temperature and substrate dopant concentration; in-film fluorine concentration; and FSG/silicon nitride defectivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
