Abstract
Strong‐field photoemission from silicon field emitter arrays is investigated by P.D. Keathley et al. 10.1002/andp.201200189, (pp. 144‐150) experimentally and results are explained using a “simple‐man” optical‐field emission model. Spectra are collected throughout an in‐situ laser annealing process, leading to a red‐shift in emitted electron energy along with an increase in electron yield. After the annealing process, a high energy plateau is formed which is explained through optical‐field emission along with electron re‐scattering with the tip surface.The image is an artistic representation of ultrafast, strong‐field emission of electrons from a silicon nanotip. The electrons are emitted in sub‐cycle bunches using an incident optical pulse centered at 800nm. Due to laser acceleration dynamics after emission, some electrons re‐scatter from the tip's surface leading to a broadband plateau in the electron energy spectra.
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