From micro to nano FinFETs: The impact of channel-shape on analog parameters

Abstract

Multiple-gate MOSFETs have been developed as an answer to the undesirable effects suffered by single-gate devices, due to continuous scaling of the transistor dimensions. Such devices have a better control of the channel charges [1,2], allowing better scalability performance. The FinFET architecture is a feasible implementation for dual and triple gate transistors. FinFETs and other non-planar devices frequently present variations along the sidewalls caused by technological limitations in the etching process, resulting on nearly trapezoidal fin cross-sections and consequent effects on its electric parameters [3,4,5] such as transconductance, output conductance, intrinsic voltage gain, gate capacitance and unit-gain frequency. This work addresses the importance of the fin cross-section shape on the main electric parameters, as the fin dimensions are downscaled, through three-dimensional numerical simulations.