Sensitivity Analysis of Junctionless FinFET for Analog Applications

Abstract

This study gives an insight of junctionless FinFET device, by targeting sensitivity of device analog performance metrics with respect to geometrical variations. Effect of geometrical parameters are studied on analog performance metrics such as transconductance (g m ), output conductance (g ds ), intrinsic voltage gain (A v ), gate capacitance (C gg ) and unity gain frequency (f T ). Parameters such as g m , g ds , A v , Cgg and f T are found more sensitive to Fin thickness (~62.67%), gate length (~59.49%), oxide thickness (~64.29%), gate length (~39.53%) and Fin thickness (~73.70 %), respectively. This analysis improves the understanding of junctionless device sensitivity against the geometrical variations for analog applications.