Abstract
Results of InP/GaInAsP interface study using the contact probe profiling method are presented. Results of the interface study are given for λ=1.3 μm laser heterostructures. A correlation is shown between the shape of the interface in the heterostructure and the threshold current of lasers produced from such heterostructures. The correlation of the results with secondary ion mass spectroscopy measurements is also demonstrated. An idea is given of how to detect the very close spaced interfaces with the contact probe method. Its realization with the use of Kr+ ion bombardment is shown. In conclusion the ballistic electron emission microscopy is suggested as an attractive new method for characterization of shallow heterostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
