Abstract
The classical MOSFET is reaching its scaling limits and end-of-roadmap alternative devices are being investigated. Amongst the different types of SOI devices proposed, one clearly stands out: the multigate field-effect transistor (multigate FET). This device has a general wire-like shape. Multigate FETs are commonly referred to as multi(ple)-gate transistors, FinFETs, tri(ple)- gate transistors, GAA transistors, etc. This paper describes the reasons for evolving from single-gate to multi-gate structures. It also describe some issues in ultra-small devices, such as doping fluctuation effects and quantum confinement effect.
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