From charge spin logic to probabilistic spin logic - An experimental approach

Abstract

While magnetic materials in storage devices are part of our electronic world since many decades and are explored more recently by the semiconductor industry for memory applications such as Spin-transfer torque magnetic random-access memory (STT-RAM), spin based devices for applications are still in their infancies. Mimicking a CMOS type with magnets requires a Write and a Read unit as well as proper input/output isolation. In my presentation, I will first describe what we call charge spin logic (CSL) and then probabilistic spin logic (PSL) as implementations of this novel type of spin based devices.