Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics

Abstract

Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100 nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident for K>25 and worsens as K increases (without buffer oxide). With a buffer oxide, FIBL can be completely suppressed for K<25, and partially for higher K. FIBL worsens as the gate length becomes shorter. Complete removal of high-K dielectrics on the active area induces a smaller FIBL.