Abstract
Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100 nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident for K>25 and worsens as K increases (without buffer oxide). With a buffer oxide, FIBL can be completely suppressed for K<25, and partially for higher K. FIBL worsens as the gate length becomes shorter. Complete removal of high-K dielectrics on the active area induces a smaller FIBL.
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