Abstract
Porous GaP, InP and GaAs structures fabricated by MeVion-implantation-assisted electrochemical etching were investigatedby Raman and Fourier transform infrared spectroscopy. Fröhlichmodes in the frequency gap between the transverse optical andlongitudinal optical frequencies were observed and theirlongitudinal-transverse splitting was established. Thefrequency-dependent optical properties in the infrared region werecalculated using a dielectric function derived on the basis of anappropriate two-dimensional effective-medium theory. Thetheoretical reflectance spectra are found to be in good agreementwith the experimental ones and the predicted coupledFröhlich-plasmon modes for conducting samples were observedexperimentally. The wavelength used in Raman measurements did notfulfil the requirements of effective-medium theory, but theresulting spectra could be explained at least qualitatively bytaking into account the diffuse scattering.
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