Abstract
A technique has been developed for computerized acquisition and frequency-domain analysis of dynamic reflection high-energy electron diffraction (RHEED) intensity data obtained during growth by molecular-beam epitaxy (MBE). This technique allows the rapid, accurate determination of the frequency of RHEED oscillations, not only when these oscillations are well resolved, but also when the growth conditions yield oscillations that are too poorly resolved to permit frequency analysis by conventional procedures. The new technique has been used to study transients in the growth of AlGaAs on GaAs substrates and also to investigate the heteroepitaxial growth of GaAs on Si.
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