Frequency response of nanoscale core-shell of silicon wires doped with boron and nickel

Abstract

In this work, silicon microcrystals doped with a boron impurity to concentrations corresponding to the metal-dielectric transition in silicon of 5.5·1018 cm−3 and a nickel impurity in the temperature range of 4.2 ÷ 70 K under alternating current in the frequency range of 0.010 ÷ 250 kHz were studied. The features of the frequency response of silicon microcrystals are determined. On the basis of Nyquist diagrams, an equivalent conductivity scheme at low temperatures is proposed. The frequency response of the samples was evaluated and the mechanisms of charge carrier flow were proposed depending on the observation conditions. Conduction mechanisms from quantum mechanical tunneling (QMT) to superlinear power law (SLPL), which can be implemented in crystals, are considered.