Abstract
The ambipolar graphene field-effect transistors (GFETs) usually exhibit Λ-shaped resistance versus gate voltage characteristics (R-Vg curve) with the n- and p-type regions switching at the neutrality points of graphene. However, M-shaped R-Vg curves were frequently observed in our back-gated GFETs without intentional doping. Here, we proposed an implementation of a frequency multiplier using the M-like shape of the R-Vg curve. We first investigated the effect of the channel length and the contact transfer length in a GFET on the shape of the R-Vg curve and then evaluated the influence of the various shapes of R-Vg curves on the performance of the frequency multiplier (including tripler and quadrupler). Finally, a frequency tripler based on a single GFET has been experimentally demonstrated. When applying a sinusoid input signal with a fundamental frequency at a suitable operation area, around 80% output signal power is concentrated at the third harmonic. The excellent output spectral purity makes GFETs with the M-shaped R-Vg curve promising candidates for the frequency multiplier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
