Abstract
Non-linearity of metal oxide semiconductor field-effect transistor (MOSFET) characteristics induces harmonic distortions, which causes serious problems for RF analog applications. Features of the harmonic distortions are investigated experimentally under high frequency operations. Comparison of measured harmonic distortions with inter-modulation distortions concludes that the harmonic distortions are frequency dependent under high frequency operations. A reason for this is enhanced contribution of the displacement, which is originally frequency dependent.
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