Abstract
We have studied the frequency-conductance characteristics of the sputtered Mo-n Si Schottky barrier by using an AC small signal equivalent network. As a result, it was found that a damaged layer is formed on the Si surface and a deep level in the damaged layer acts as a trapping center for electrons. The deep level in the damaged layer is localized in the vicinity of the mid band gap and the capture cross-section is of the order of 10-12 cm2. The damaged layer was annealed at a temperature of 500°C and a level like the continuous surface level is left at the Mo–Si interface.The capture cross-section of this level is of the order of 10-16 cm2.
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