Frequency characteristics of sub-100 nm double-gate MOSFET for suppressing short channel effects

Abstract

We have investigated threshold voltage for each gate length in order to find the optimum value for side gate length and side gate voltage. We find clear on–off stages according to the bias conditions of both gates when side gate voltage is above 2 V and side gate length is above 70 nm. We have obtained the minimum short channel effect for a double-gate metal oxide semiconductor field effect transistor (DG MOSFET). We know that the optimum side gate voltage for each side gate length is about 2 V in the case that the main gate length is 70 nm. The cut-off frequency value is 41.4 GHz at LSG = 70 nm. As a result, the DG MOSFET has excellent electrical characteristics and very high cut-off frequency.