Abstract
MgBi2V2O9: a layered perovskite material, synthesized by solid state reaction method. The frequency and temperature dependent electrical properties of the materials were studied. The electrical properties of the material were characterized through impedance and modulus spectroscopy in a wide range of frequency (100 Hz–1 MHz) and temperature (25–500 °C). Structural analysis trough XRD revealed the formation of monoclinic structure with a = 5.1950 Å, b = 11.7010 Å, c = 5.0920 Å, respectively. Both the complex impedance and complex modulus plots confirm the contribution of grain and grain boundary. The manifestation of the relaxation frequency of the material indicate the presence of non-Debye type of relaxation in the materials.
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