Abstract
A novel type of high speed photodetector has been fabricated by placing an interdigital metal electrode pattern directly on the surface of a semi-insulating Cr-Doped GaAs substrate. The photo-conductor was found to have an analog bandwidth in excess of 4 GHz and a pulse risetime of less than 50 ps. Large photoconductive gain was observed under CW illumination. Photoconductive gain was less than unity under RF modulated illumination. The sensitivity, pulse and frequency response compare well with the best commercial detectors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
