Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE

Abstract

Four-inch semi-insulating free-standing gallium nitride (GaN) wafers grown by hydride vapor phase epitaxy (HVPE) with carbon doping were obtained by a self-separated process. The as-grown wafer thickness can reach 900 µm without cracks. The dopant gas was methane (CH4) with concentration of 5% CH4 in N2. The FWHMs of (002) and (102) x-ray diffraction rocking curves were lower than 100 arcsec and typically were 40 – 60 arcsec. The resistivity was measured to be greater than 1010 Ω-cm.