Abstract
AbstractFormulas are derived for the calculation of free carrier absorption in semiconductors with ellipsoidal constant energy surfaces, including the effects of non‐parabolicity, for all important scattering mechanisms. It is shown that simple expressions for the absorption coefficient follow from a mathematically exact formulation only in case of acoustic, nonpolar optical, and inter‐valley scattering. Simple, approximate expressions are also suggested for the evaluation of the absorption coefficient in the case of polar optical phonon and impurity scattering.
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