Fracture in (100)Si after high energy protons implantation

Abstract

AbstractHigh energy protons implantation in the 1‐3 MeV range can be used to detach free‐standing thin silicon films with thickness between 15 and 100 µm. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100)Si after high energy implantation in order to understand the origin of such a behaviour. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Despite this unfavourable precursors orientation, fracture propagation in (100)Si can be achieved by increasing the hydrogen fluence. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)