Fracture Behavior of Thin Film PZT on Silicon Mems and Membranes

Abstract

ABSTRACTThis research focuses on identifying the fracture mechanism in thin film silicon membranes and PZT on silicon composite structures under static and dynamic loading conditions. Square silicon membranes with a 3mm side-length and thickness between 1.5 and 3.0μm, with and without 1.5μm of PZT, were pressurized to failure while laser interferometry was used to determine the maximum strain at failure. The strain at fracture of silicon membranes, initiating from the sharp corner radius inside the micromachined cavity, was improved from 0.37% to 0.8% by an isotropic etch of the sharp corner. Fracture of PZT on silicon membranes, tested at the mechanical resonant frequency suggested that fracture initiates in the blanket PZT layers under reversed bending. Etching the PZT from high strain regions along the membrane surface improved the strain at failure of the composite device by 40%.