Abstract
The fractional quantum Hall effect (FQHE) has been studied as a function of magnetic field in a series of high-quality p-type GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As heterojunctions. The magnetic-field dependence of the \ensuremath{\nu}=4/3 FQHE state, investigated by tilting the samples in the applied field, is consistent with a change in the spin polarization of the ground state. The behavior suggests that the Zeeman splitting of the interacting carriers forming this ground state is larger in this material, at a given magnetic field, than in comparable n-type samples. At high tilt angles, structure is observed to emerge in the second Landau level at \ensuremath{\nu}=8/3.
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