Abstract
We have studied the fractional quantum Hall effect (FQHE) as a function of temperature and magnetic field in a series of high mobility two-dimensional hole gases. The magnetic field dependence of the FQHE structure 1 < v < 2 has been investigated by tilting the heterojunction samples in the applied magnetic field. The behaviour of the v = 3 4 FQHE state upon tilting is suggestive of a change in the spin polarization of the ground state. Temperature activation analyses have been used to quantify this spin transition.
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