Abstract
We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd(1-x)Mn(x)Te. The presence of magnetic impurities results in a giant Zeeman splitting leading to an unusual ordering of composite fermion Landau levels. In experiment, this results in an unconventional opening and closing of fractional gaps around filling factor v = 3/2 as a function of an in-plane magnetic field, i.e. of the Zeeman energy. By including the s-d exchange energy into the composite Landau level spectrum the opening and closing of the gap at filling factor 5/3 can be modeled quantitatively. The widely tunable spin-splitting in a diluted magnetic 2DES provides a novel means to manipulate fractional states.
Highlights
We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd1−xMnxTe
The fractional quantum Hall effect (FQHE) has been reported in quite a number of different materials [6,7,8,9,10,11,12], the FQHE was never observed in a diluted magnetic semiconductor in which atoms with magnetic moment (e.g. Mn2+) are placed in the 2DES
We demonstrate that (i), the FQHE exists in magnetic 2DESs, and (ii), that the opening and closing of gaps in an in-plane field can be described within a modified composite fermion (CF) picture, in which the s-d exchange is taken into account
Summary
We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd1−xMnxTe. We demonstrate that (i), the FQHE exists in magnetic 2DESs, and (ii), that the opening and closing of gaps in an in-plane field can be described within a modified composite fermion (CF) picture, in which the s-d exchange is taken into account.
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