Abstract
We studied surface nanostructures of microcrystalline Si (μc-Si) films and their relationship to electronic transport, based on fractal concepts. Two distinctive nanostructures, i.e. columnar and granular structures, are presented together with the crystallographic preferential orientations. The topological evolution of μc-Si surfaces monitored by atomic force microscope measurements is also discussed. The scaling exponents derived from fractal concepts quantitatively revealed a difference in the topological features of surface evolution related to the nanostructures of μc-Si films, thus providing a new insight into the growth kinetics. Growth kinetics were further evaluated using Monte Carlo simulations. Finally, the electronic transport of μc-Si is discussed using the lateral size and fractal boundary determined by fractal concepts.
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