Abstract
Geometric patterns formed after crystallization of GaMn amorphous films with Ga-rich compositions higher than about 80 at.% Ga were investigated by means of transmission electron microscopy. Two basically different types of the patterns were found to occur depending on the composition of the amorphous films. One, observed upon crystallization of the Ga 6Mn phase from the Ga 97Mn 3 amorphous, was composed of random ramified branches which are very similar to those formed by diffusion-limited aggregation (DLA) in two dimension, and showed the fractal dimension of D = 1.7. Another pattern was developed upon crystallization of the Ga 81Mn 19 amorphous, exhibiting a dense radial distribution of Ga 4Mn crystallites, which resembled the Eden cluster with a non fractal character. Materials parameters affecting the pattern formation are discussed.
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