Fowler–Nordheim tunneling-assisted enhancement of tunneling electroresistance effect through a composite barrier

Abstract

Tunneling behaviors of composite ferroelectric tunnel junctions (FTJs) with a no-polar dielectric (DE) layer thickness from 1 to 4 nm were investigated. It is found that the low-resistance state (ON state) current decreases with the DE thickness, while the high-resistance state (OFF state) current decreases first and then increases. The largest tunneling electroresistance (TER) effect is observed for the 3 nm-thick DE layer, which corresponds to the lowest OFF-state current. Studies on the electron transport mechanisms show that direct tunneling dominates the ON-state tunneling behaviors for all FTJs as well as the OFF state for the thinnest DE layer of 1 nm. While Fowler–Nordheim (FN) tunneling plays a significant role in the OFF-state electron transport for thicker DE thicknesses and reinforces its role with the increasing DE thickness, the weak FN tunneling-assisted low OFF-state current for the 3 nm-thick DE layer relative to the DE layer of 4 nm contributes to the largest TER effect.