Abstract
An application of the continuous wave four-wave mixing technique for studying the nature of metastable centers in semiconductors is presented. The results of measurements of the four-wave mixing scattering efficiency dependence on the intensity of the write beams for CdF2 crystals doped with In or Ga are presented and theoretically explained. It is also shown that the obtained results can be used for identification of the sign of the Hubbard correlation energy of metastable centers in semiconductors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
