Abstract

Spatially resolved Fourier-transform photoabsorption spectra of individual Ge1−xSnx nanodots, obtained by a technique based on scanning tunneling microscopy, exhibited a distinct peak far below the absorption edge of the Si substrate, which showed a clear blue shift with decreasing dot size. The energy position of the peak measured in high accuracy was in good agreement with the optical transition energy between discrete levels theoretically predicted by the size dependence due to a quantum-confinement effect, which was previously observed in scanning tunneling spectroscopic measurements.

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