Abstract
Morphological features, such as the orientation and linearity of basal plane dislocations (BPDs) in SiC crystals, were analyzed by applying a two-dimensional fast Fourier transform (2D-FFT) to X-ray topographic images of the BPDs. An SiC crystal fabricated by an improved repeated a-face (RAF) method and an SiC crystal fabricated by an conventional RAF method discussed in a previous study were evaluated. In the 2D-FFT images of the improved crystal, streaks along the directions were observed, indicating that the BPDs were highly oriented along the directions. The degree of orientation of the BPDs, which may reflect their linearity, was calculated, and the improved RAF crystal had a much higher degree of orientation than the conventional RAF crystal.
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