Abstract
A technique for the determination of built-in electric fields by Fourier transformation of Franz-Keldysh oscillations in photoreflectance (PR) spectra is developed. This technique can be used for the resolution of “mixed” PR spectra originating from the surface and buried interfaces of layered semiconductor structures. Fourier transformation is especially effective in combination with phase-resolved photo-reflectance, which allows to change the relative amplitude of different PR spectral components. Model MBE-grown GaAs structures with uniform surface electric fields are investigated. Along with the surface PR component, a component originated from the buffer-substrate interface is extracted by Fourier transformation and phase resolution techniques. The energy band diagram of the structure is reconstructed. The Fermi level is shown to be pinned at the buffer-substrate interface by defect-induced electronic states.
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