Abstract
AbstractA novel procedure for the numerical modelling of current transport in semiconductor devices is presented. The method is based on high‐order trigonometric expansions (Fourier series) of the solution. The expansion coefficients are calculated in a Galerkin‐type algorithm. The method offers infinite‐order accuracy regardless of the number of spatial dimensions of the model. Well‐conditioning and diagonal dominance of the discrete equations render the numerical procedure stable and effective. Significant advantages are expected, particularly for the solution of strongly non‐linear multidimensional device models. Properties of the algorithm are demonstrated on standard semiconductor devices.
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