Abstract
We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.
Highlights
Multiferroic materials are characterized by structures in which their magnetism can be modulated via electric fields in terms of the converse magnetoelectric (ME) effect[1,2]
We report a giant, stable, tunable and non-volatile converse magnetoelectric effect (ME) effect in a new type of FeAl/ PIN-PMN-PT FM/FE heterostructure at room temperature with electrical magnetization modulation; the maximum relative magnetization change (ΔM/M) of the proposed system is up to 66%, i.e., quite high compared to those reported in similar studies[14,16,26]
We should note that the results cannot be explained by the terms related to the electric-field induced charge accumulation at the interface, because its contribution is too small to account for the achieved large modulation in magnetization which should come from the entire film[33,35]
Summary
Multiferroic materials are characterized by structures in which their magnetism can be modulated via electric fields in terms of the converse magnetoelectric (ME) effect[1,2]. To achieve a giant, stable, tunable and non-volatile ME effect, the combination of a FeAl thin film and a PIN-PMN-PT(011) single crystal is a perfect candidate.
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