Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

Experimental investigation on the negative bias temperature instability (NBTI) recovery of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) with forward body bias (FBB) was conducted. Our results show that not only the positive gate bias but also the FBB will enhance the recovery of NBTI for pMOSFETs. A forward-body-bias-enhanced NBTI recovery mechanism was proposed with evidence of the NBTI recovery with FBB dependence and corresponding electron/hole density simulation results. Furthermore, the dynamic NBTI degradation was compared with and without FBB. The enhancement of NBTI recovery by FBB gives a comparable lifetime of zero body bias, which indicates that the forward body biasing technique can improve the drive capability without deteriorating NBTI performance.