Abstract
High-voltage diodes based on silicon carbide of 4H polytype (4H-SiC) have been studied by the deep-level transient spectroscopy (DLTS) method. It is established that the passage of forward current leads to the activation of a donor center with an activation energy of Ec − 0.2 eV and an electron capture cross section of σn ∼ 2.0 × 10−15 cm2. The DLTS measurements reveal the appearance of this center upon the transfer of a very small charge through the diode, under the conditions where the forward voltage drop on the diode remains almost unchanged. A possible nature of the observed phenomenon is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
