Abstract
The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield (δ m) at W p0m ≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV ≤ W p0 < 10 keV (δ 2–10) and 10 keV ≤ W p0 ≤ 100 keV (δ 10–100) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced formulae can be used to calculate δ 2–100 at W p0m ≤ 800 eV.
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