Abstract
Spatially or spectrally selective photoluminescence (PL) studies, as well as time-resolved PL, highlight the superior intrinsic electronic properties of InAs GaAs quantum boxes (QBs) obtained by self-organized molecular beam epitaxy. A given QB displays a single PL line, with linewidth much smaller than the thermal energy kT. The emission of resonantly excited QBs is slightly Stokes shifted (0.7 meV) with respect to their fundamental optical transition. Ultrafast carrier capture and relaxation (≈20 ps) is observed in spite of the large energy between QB levels. Usually foreseen applications of QBs in optoelectronics are however still out of reach due to the inhomogeneous broadening induced by size fluctuations and, for the smaller QBs, thermoemission. Novel applications of such QBs in optoelectronics, such as efficient light emitting diodes on silicon, are proposed and validated experimentally.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
