Abstract
The structures of 940 nm low vertical beam divergence semiconductor lasers grown by molecular beam epitaxy are presented. The high power laser consists of an array of closely spaced tapered waveguides giving lower parallel beam divergence and window structure. The emission wavelength is 939 nm . The FWHM of the far field pattern is 8×30°. The maximum continuous wave (CW) output power of 30 W has been achieved. In the aging tests, the laser arrays have been operating for over 3000 h under the CW condition of 25 W .
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