Abstract
The fabrication of a manganese oxide and cerium oxide bilayer structure with a 5 × 5 crossbar array was demonstrated. The resistive switching characteristics of Ag/MnO/CeO2/Pt devices were investigated. The devices showed stable forming-free bipolar resistive switching properties with high resistance ratio (>105–6). Resistive switching phenomena were ascribed to the formation and rupture of oxygen-deficient conductive filaments. The mechanisms of ohmic and Schottky conductions were investigated to determine the resistance switching mechanism.
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