Abstract
Through oxygen profile engineering, we fabricated W/AlO $_{\mathbf {x}}$ /Al $_{\mathbf {{2}}}~\text{O}_{\mathbf {{3}}}$ /Pt bilayer memristors with a 250-nm feature size. The AlO $_{{\mathbf {x}}}$ fabricated by sputtering serves as an oxygen vacancy source, whereas the Al $_{{\mathbf {{2}}}}~\text{O}_{{\mathbf {{3}}}}$ deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio ( $\sim 10^{{\mathbf {{3}}}}$ @100K, $\sim 10^{{\mathbf {{3}}}}$ @298K, and $\sim 80$ @400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature ( $10^{{\mathbf {{8}}}}$ @100K, $10^{{\mathbf {{10}}}}$ @298K, and $10^{{\mathbf {{7}}}}$ @400K) is demonstrated, to the best of our knowledge.
Published Version
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