Abstract
Coherent ultrathin GaAsN insertions are formed ina GaN matrix by predeposition of an ultrathin GaAs layer on a GaNsurface, followed by annealing in an NH3 atmosphere andovergrowth with GaN. During the overgrowth, most of the As atomsare substituted by N, with a dense array of coherent GaAsNnanodomains with lateral sizes of about 3-4 nm formed in the GaN matrix.We report a green luminescence due to GaAsN insertions, surviving at high observation temperatures and excitation densities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
