Abstract
In this study, we investigated how zinc, sputtered from a zinc target, reacts with oxygen on the substrate to form ZnO nanostructures when the discharge parameters, such as gas flow ratio and target bias voltage, are controlled in O 2/Ar plasma. The deposits were estimated by SEM and Raman spectroscopy. Under conditions of a Zn to Ar optical emission intensity ratio of 2/1, a target voltage of − 550 V, a total pressure of 40 Pa, a substrate temperature of 150 °C, an RF power of 50 W, and a deposition time of 30 min, many vertically aligned ZnO nanorods were observed to be deposited on the substrate. The diameter of the rods was typically 50 nm. It was found that the film morphology can be controlled by the sputtering rate of zinc varied by the target bias voltage and gas flow rate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
