Abstract
YCrO3 thin films were prepared on thermally oxidized silicon wafers by a radio-frequency magnetron sputtering method. Microstructure and crystallinity of thin films, deposited and then postannealed at various temperatures (between 600°C/1 h and 800°C/1 h), were characterized using transmission electron microscopy and X-ray diffraction. An amorphous phase was observed in an as-deposited sample. A mixture of an amorphous phase and a crystalline phase was observed in the sample annealed at 600°C/1 h, and completely crystallized YCrO3 thin films were observed in samples annealed at above 700°C/1 h. YCrO3 thin films showed a linear characteristic in the log σT vs 1/T plot in the temperature range between 300°C and 800°C.
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