Abstract
ABSTRACTAn unusual Ni distribution with two completely separated buried and surface suicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300° C, with a dose of 1.1 × 1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co4mplantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
