Abstract
Rapid nitridation of Ti film evaporated on a Si and SiO2/Si wafer using a large area electron beam has been described. A predominant enhanced processing of an e‐beam should be considered. The film structure of the sample processed by an e‐beam has been characterized by Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) analysis, after rapid processing. Identification of the chemical composition of the film was performed with x‐ray diffraction. The minimum sheet resistance of TiN was about 0.6 and 14.2 Ω/⧠ for Si and SiO2/Si substrate, respectively. A ratio of 0.96%±5% (N/Ti), the stoichiometric composition of the sample characterized by RBS, has been obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
